| PART |
Description |
Maker |
| STB9NB50 5376 |
N-Channel Enhancement Mode PowerMESHTM MOSFET(N沟道增强模式MOSFET)
N - CHANNEL ENHANCEMENT MODE Power MESH MOSFET
N - CHANNEL ENHANCEMENT MODE Power MESH] MOSFET
From old datasheet system
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| STN2N10L 4585 |
N-Channel Enhancement Mode Power MOS Transistor(Ｎ沟道增强模式功率ＭＯＳ晶体 N沟道增强模式功率MOS晶体管（不适用沟道增强模式功率马鞍山晶体管
From old datasheet system
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
|
STMicroelectronics N.V.
ST Microelectronics
|
| APT5014BLL APT5014SLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS 电源MOS 7TM是一个低损耗，高电压，N沟道增强模式的新一代功率MOSFET
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS 7 500V 35A 0.140 Ohm
|
Advanced Power Technology, Ltd.
|
| AP15P15GI14 AP15P15GI |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Simple Drive Requirement
|
Advanced Power Electronics Corp.
|
| AP25P15GS-HF AP25P15GS-HF14 |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Simple Drive Requirement
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
Advanced Power Electronics Corp.
|
| ARF466FL APT466FL |
RF POWER MOSFETs N-CHANNEL ENHANCEMENT MODE 200V 300W 45MHz
N-CHANNEL ENHANCEMENT MODE RF POWER MOSFETs
|
ADPOW[Advanced Power Technology]
|
| SSU50N10 SSU50N10-15 |
54A , 100V , RDS(ON) 22m N-Ch Enhancement Mode Power MOSFET
N-Ch Enhancement Mode Power MOSFET
|
SeCoS Halbleitertechnologie GmbH
SeCoS Halbleitertechnol...
|
| MTP3N60FI MTP3N60 3037 |
N-Channel Enhancement Mode Power MOS Transistor(N沟道增强模式功率MOSFET)
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
From old datasheet system
|
意法半导
STMicroelectronics
Motorola, Inc
|
| IRFF120 IRFF121 IRFF122 IRFF123 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A.
N-CHANNEL ENHANCEMENT-MODE POWER MOS FIELD-EFFECT TRANSISTORS
|
General Electric Solid State
GE Solid State
|
| APT50M50L2FLL |
POWER MOS 7 500V 89A 0.050 Ohm
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗，高电压，N沟道增强型功率MOSFET的新一代
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology, Ltd.
|
